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IXFH40N50Q - LITTELFUSE

Description: MOSFET N-CH 500V 40A TO247AD

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IXFH40N50Q - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFH40N50Q
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3D Models
IXFH40N50Q - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFH40N50Q
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IXFH40N50Q Details

  • Manufacturer Part Number:

    IXFH40N50Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH40N50Q Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH40N50Q is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While IXFH40N50Q is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for 50-60 Hz AC applications, and high-frequency switching may lead to increased losses and reduced reliability.
  • To ensure proper drive and control, use a gate driver IC specifically designed for IGBTs, such as the Littelfuse SG3525. The gate driver should be able to provide a high peak current (typically 1-2 A) and a voltage rating that matches the IGBT's gate-emitter voltage (typically 15-20 V). Additionally, ensure the gate driver is properly configured and connected to the IGBT.
  • The maximum allowed case temperature for IXFH40N50Q is 150°C. Exceeding this temperature may lead to reduced reliability, increased thermal resistance, and potentially even device failure. Ensure proper heat sinking and thermal management to keep the case temperature within the recommended range.
  • While it's technically possible to parallel multiple IXFH40N50Q devices, it's not recommended due to the potential for current imbalance and uneven stress between devices. Instead, consider using a single device with a higher current rating or exploring alternative solutions that can handle the required current.

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IXFH40N50Q Overview

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