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IXFH70N20Q3 - LITTELFUSE

Description: Trans MOSFET N-CH 200V 70A 3-Pin(3+Tab) TO-247

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IXFH70N20Q3 Details

  • Manufacturer Part Number:

    IXFH70N20Q3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    690 W

  • Pulsed Drain Current-Max (IDM):

    210 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH70N20Q3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH70N20Q3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components.
  • The maximum allowed case temperature for the IXFH70N20Q3 is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • Yes, the IXFH70N20Q3 is suitable for high-reliability and automotive applications. It's built with high-quality materials and has undergone rigorous testing to ensure its reliability and performance. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required specifications.
  • To protect the IXFH70N20Q3 from EOS and ESD, it's recommended to use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) in parallel with the device. Additionally, ensure that the PCB design follows good ESD protection practices, such as using ESD-sensitive component handling and storage procedures.

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IXFH70N20Q3 Overview

Use the download button to access the IXFH70N20Q3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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