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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFN210N20P
- Part Number IXFN210N20P
- Manufacturer LITTELFUSE
- Pin Count 4
- Part Category MOSFET (N-Channel)
- Last Modified Date Aug 14, 2024 10:10 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXFN210N20P Details
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Manufacturer Part Number:
IXFN210N20P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
5.92
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
4000 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
200 V
IXFN210N20P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXFN210N20P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes for optimal thermal performance.
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While IXFN210N20P is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz due to its relatively high switching losses. For high-frequency applications, consider using a dedicated high-frequency IGBT or MOSFET device.
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To ensure reliable operation of IXFN210N20P in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the junction temperature below the maximum rated value of 150°C. Also, consider derating the device's current and voltage ratings according to the datasheet's thermal derating curves.
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Yes, you can parallel multiple IXFN210N20P devices to increase current handling, but it's crucial to ensure that the devices are properly matched and synchronized to avoid current imbalance and oscillations. Additionally, consider the increased thermal management requirements and potential for electromagnetic interference (EMI) when paralleling devices.
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The recommended gate drive voltage for IXFN210N20P is between 10V and 15V, with a maximum gate-source voltage of ±20V. Using a gate drive voltage within this range ensures optimal switching performance and minimizes the risk of device damage.
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IXFN210N20P Overview
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