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IXFN36N100 - LITTELFUSE

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IXFN36N100 - LITTELFUSE  - 3D model
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IXFN36N100 Details

  • Manufacturer Part Number:

    IXFN36N100

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    300 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    700 W

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN36N100 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN36N100 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While IXFN36N100 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies. Using it at higher frequencies may lead to increased losses, reduced efficiency, and potential reliability issues.
  • To ensure the reliability of IXFN36N100 in high-temperature environments, it's essential to follow proper thermal management practices. This includes providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C. Additionally, consider derating the device's current and voltage ratings according to the temperature derating curve provided in the datasheet.
  • The recommended gate drive voltage for IXFN36N100 is between 10V and 15V. A higher gate drive voltage can reduce the turn-on time and improve the device's overall performance. However, it's essential to ensure that the gate drive voltage does not exceed the maximum rated value of 20V to prevent damage to the device.
  • Yes, IXFN36N100 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential reliability issues. Additionally, consider the increased thermal management requirements when paralleling devices.

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IXFN36N100 Overview

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