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IXFN73N30 - LITTELFUSE

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IXFN73N30 - LITTELFUSE  - 3D model
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IXFN73N30 Details

  • Manufacturer Part Number:

    IXFN73N30

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    73 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    520 W

  • Power Dissipation-Max (Abs):

    520 W

  • Pulsed Drain Current-Max (IDM):

    292 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN73N30 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN73N30 is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While IXFN73N30 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz. For higher frequencies, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure reliability in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C. Additionally, consider derating the device's current and voltage ratings according to the manufacturer's recommendations.
  • While it's technically possible to parallel multiple IXFN73N30 devices, it's not recommended due to potential current imbalance and thermal runaway issues. Instead, consider using a single device with a higher current rating or a different device specifically designed for parallel operation.
  • The recommended gate drive voltage for IXFN73N30 is between 10 V and 15 V. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide damage. Always follow the manufacturer's recommended gate drive voltage range to ensure reliable operation.

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IXFN73N30 Overview

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