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IXFP34N65X2 - LITTELFUSE

Description: Trans MOSFET N-CH 650V 34A 3-Pin(3+Tab) TO-220AB

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PCB Footprints
IXFP34N65X2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (IXFP)
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3D Models
IXFP34N65X2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220 (IXFP)
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IXFP34N65X2 Details

  • Manufacturer Part Number:

    IXFP34N65X2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP34N65X2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFP34N65X2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good airflow around the device. The maximum junction temperature (Tj) should not exceed 150°C.
  • The IXFP34N65X2 can withstand voltage spikes up to 1.5 times the maximum rated voltage (650V) for a duration of less than 10ms, but it's recommended to use a TVS diode or other protection circuitry to prevent damage from voltage transients.
  • Yes, the IXFP34N65X2 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of Vgs(th) and Rds(on) to prevent uneven current sharing and potential damage.
  • The recommended gate drive voltage for the IXFP34N65X2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.

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IXFP34N65X2 Overview

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