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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFP34N65X2M
- Part Number IXFP34N65X2M
- Manufacturer LITTELFUSE
- Last Modified Date Aug 2, 2021 10:22 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXFP34N65X2M Details
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Manufacturer Part Number:
IXFP34N65X2M
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
1000 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
650 V
IXFP34N65X2M Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IXFP34N65X2M is a standard TO-263 (D2PAK) footprint with a minimum pad size of 4.5mm x 2.5mm and a thermal pad size of 3.5mm x 2.5mm.
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Yes, the IXFP34N65X2M is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times. However, it's essential to consider the device's parasitic inductance and capacitance when designing the circuit.
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To ensure proper cooling, provide a thermal path from the device to a heat sink or a metal plate on the PCB. Apply a thermal interface material (TIM) between the device and the heat sink, and ensure good airflow around the device. The maximum junction temperature (Tj) should not exceed 150°C.
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The recommended gate drive voltage for the IXFP34N65X2M is between 10V and 15V. A higher gate drive voltage can reduce the device's on-state resistance, but it may also increase the gate charge and switching losses.
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Yes, the IXFP34N65X2M can be paralleled to increase current handling, but it's essential to ensure that the devices are matched in terms of their electrical characteristics and thermal performance. Additionally, the PCB design should be optimized to minimize current imbalance and thermal gradients between the devices.
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IXFP34N65X2M Overview
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