Part Image

IXFP3N120 - LITTELFUSE

Description: N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3

Download IXFP3N120 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IXFP3N120 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_2022
click to zoom
3D Models
IXFP3N120 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220_2022
click to zoom

IXFP3N120 Details

  • Manufacturer Part Number:

    IXFP3N120

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    4.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP3N120 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFP3N120 is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • Yes, IXFP3N120 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range.
  • Yes, you can parallel multiple IXFP3N120 devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.
  • The recommended gate drive voltage for IXFP3N120 is between 10V and 15V, with a minimum gate drive current of 100mA to ensure reliable switching.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXFP3N120 Overview

Use the download button to access the IXFP3N120 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFP3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFP3N120

Showing 0 results