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IXFT100N30X3HV - LITTELFUSE

Description: N-Channel 300 V 100A (Tc) 480W (Tc) Surface Mount TO-268HV (IXFT)

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PCB Footprints
IXFT100N30X3HV - LITTELFUSE PCB footprint - Other - Other - TO-268HV_2025
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3D Models
IXFT100N30X3HV - LITTELFUSE  - 3D model - Other - TO-268HV_2025
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IXFT100N30X3HV Details

  • Manufacturer Part Number:

    IXFT100N30X3HV

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.7

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFT100N30X3HV Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFT100N30X3HV is a TO-247-3L package with a minimum pad size of 5.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • Yes, the IXFT100N30X3HV is suitable for high-reliability applications. Littelfuse Inc. has qualified this device to meet the requirements of AEC-Q101, which ensures that it meets the stringent reliability standards of the automotive industry. Additionally, the device is manufactured using a robust process that minimizes defects and ensures consistent performance.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and to follow the recommended thermal design guidelines. The IXFT100N30X3HV has a thermal resistance (RθJC) of 1.5°C/W, which means that it can dissipate up to 100W of power with a proper heat sink. You should also ensure that the device is mounted correctly and that the thermal interface material (TIM) is applied correctly to minimize thermal resistance.
  • Yes, the IXFT100N30X3HV is suitable for high-frequency switching applications. The device has a fast switching time (trr) of 35ns, which makes it suitable for high-frequency switching applications up to 100kHz. However, you should ensure that the device is properly snubbed to prevent ringing and oscillations, and that the PCB layout is optimized to minimize parasitic inductance and capacitance.
  • The recommended gate drive voltage for the IXFT100N30X3HV is 15V. This ensures that the device is fully enhanced and that the switching time is minimized. However, you can also use a lower gate drive voltage, such as 10V or 12V, depending on your specific application requirements.

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IXFT100N30X3HV Overview

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