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IXFT58N20 - LITTELFUSE

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IXFT58N20 - LITTELFUSE  - 3D model
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IXFT58N20 Details

  • Manufacturer Part Number:

    IXFT58N20

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D3PAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    285 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    232 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    115 ns

  • Turn-on Time-Max (ton):

    45 ns

IXFT58N20 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFT58N20 is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While the IXFT58N20 is a fast-switching MOSFET, it's not recommended for high-frequency switching applications above 100 kHz due to its relatively high gate charge and internal gate resistance. For high-frequency applications, consider using a MOSFET with a lower gate charge and internal gate resistance.
  • To ensure proper cooling, make sure to provide a sufficient heat sink with a thermal resistance of less than 1°C/W. Also, ensure good thermal contact between the MOSFET and the heat sink using a thermal interface material. Finally, keep the ambient temperature below 50°C to prevent thermal runaway.
  • Yes, you can parallel multiple IXFT58N20 devices to increase current handling, but it's crucial to ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents. Additionally, make sure to follow proper layout and thermal design guidelines to prevent thermal hotspots.
  • The recommended gate drive voltage for the IXFT58N20 is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve switching performance, but it may also increase power consumption and EMI emissions.

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IXFT58N20 Overview

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