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IXTA1N200P3HV - LITTELFUSE

Description: MOSFET 2000V/1A HV Power MOSFET, TO-263HV

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IXTA1N200P3HV - LITTELFUSE PCB footprint - Other - Other - IXTA1N200P3HV
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IXTA1N200P3HV - LITTELFUSE  - 3D model - Other - IXTA1N200P3HV
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IXTA1N200P3HV Details

  • Manufacturer Part Number:

    IXTA1N200P3HV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    2000 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    40 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    3 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA1N200P3HV Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA1N200P3HV is a standard SMD footprint with a pad size of 5.08mm x 2.54mm, and a spacing of 1.27mm between pads. However, it's recommended to consult the Littelfuse application note AN9313 for more detailed information on PCB layout and design considerations.
  • While IXTA1N200P3HV is rated for operation up to 150°C, it's essential to consider the derating of the device's characteristics at high temperatures. Consult the datasheet for temperature derating curves and ensure that the device is used within its specified operating conditions to maintain reliability and performance.
  • To ensure the reliability of IXTA1N200P3HV in a high-vibration environment, it's crucial to follow proper mounting and soldering techniques. Use a secure and reliable soldering process, and consider using a vibration-resistant mounting method such as a screw-down or clip-mount arrangement. Additionally, ensure that the PCB is designed to withstand the vibration and shock conditions.
  • IXTA1N200P3HV is designed to operate in a normal humidity environment. However, if the device is to be used in a high-humidity environment, it's essential to take precautions to prevent moisture ingress. Consider using a conformal coating or potting compound to protect the device, and ensure that the PCB is designed with moisture-resistant materials and construction.
  • To prevent damage and ensure the reliability of IXTA1N200P3HV, it's essential to follow proper storage and handling procedures. Store the devices in their original packaging, away from direct sunlight and moisture. Handle the devices by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps or mats when handling the devices to prevent electrostatic discharge.

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IXTA1N200P3HV Overview

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