IXTH2R4N120P - LITTELFUSE

IXTH2R4N120P Details

• Manufacturer Part Number:

  IXTH2R4N120P

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Philippines

• ECCN Code:

  EAR99

• Manufacturer:

  Littelfuse Inc

• YTEOL:

  6

• Additional Feature:

  AVALANCHE RATED

• Avalanche Energy Rating (Eas):

  200 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  1200 V

• Drain Current-Max (ID):

  2.4 A

• Drain-source On Resistance-Max:

  7.5 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-247AD

• JESD-30 Code:

  R-PSFM-T3

• JESD-609 Code:

  e3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  125 W

• Pulsed Drain Current-Max (IDM):

  6 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  NO

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  10

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON