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IXTH3N200P3HV - LITTELFUSE

Description: High Voltage Power MOSFET, N-Channel Enhancement Mode

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PCB Footprints
IXTH3N200P3HV - LITTELFUSE PCB footprint - Other - Other - IXTH3N200P3HV-1
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3D Models
IXTH3N200P3HV - LITTELFUSE  - 3D model - Other - IXTH3N200P3HV-1
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IXTH3N200P3HV Details

  • Manufacturer Part Number:

    IXTH3N200P3HV

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    2000 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    58 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    520 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IXTH3N200P3HV Overview

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