- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTH6N120
- Part Number IXTH6N120
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-247AD_2024
- Released Date Mar 19, 2025
- Last Modified Date Mar 19, 2025 10:16 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXTH6N120 Details
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Manufacturer Part Number:
IXTH6N120
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Country Of Origin:
Philippines
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
500 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
IXTH6N120 Frequently Asked Questions (FAQs)
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The maximum operating temperature range for the IXTH6N120 is -55°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance may degrade at extreme temperatures, and the user should consult the datasheet for specific temperature-related characteristics.
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To ensure proper cooling, follow the recommended thermal management guidelines in the datasheet. This includes providing adequate heat sinking, using thermal interface materials, and maintaining a safe distance from other heat-generating components. Additionally, consider using thermal simulation tools to optimize your design.
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The recommended gate drive voltage for the IXTH6N120 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching characteristics.
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While the IXTH6N120 is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. It's essential to consult with Littelfuse Inc or a qualified representative to determine if the device meets the necessary standards and certifications for your specific application.
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To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures for the IXTH6N120. This includes using ESD-safe materials, grounding yourself before handling the device, and storing the device in a protective package. Additionally, consider implementing ESD protection circuits in your design.
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IXTH6N120 Overview
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