Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IXTQ52N30P - LITTELFUSE

Description: MOSFET 52 Amps 300V 0.066 Ohm Rds

Download IXTQ52N30P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IXTQ52N30P - LITTELFUSE - PCB symbol
click to zoom
PCB Footprints
IXTQ52N30P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P Outline
click to zoom
3D Models
IXTQ52N30P - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-3P Outline
click to zoom

IXTQ52N30P Details

  • Manufacturer Part Number:

    IXTQ52N30P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    400 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTQ52N30P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTQ52N30P is a TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • To ensure reliable operation of the IXTQ52N30P in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 150°C.
  • The maximum allowed voltage transient for the IXTQ52N30P is 400V, as specified in the datasheet. Exceeding this value may damage the device.
  • Yes, the IXTQ52N30P can be used in a parallel configuration to increase current handling, but it is recommended to follow proper design and layout guidelines to ensure equal current sharing and to minimize thermal mismatch between devices.
  • The recommended gate drive voltage for the IXTQ52N30P is 10V to 15V, as specified in the datasheet. Using a higher gate drive voltage may improve switching performance, but may also increase power losses.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXTQ52N30P Overview

Use the download button to access the IXTQ52N30P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTQ5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXTQ52N30P

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑