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IXTY1R6N50D2 - LITTELFUSE

Description: MOSFET N-CH 500V 1.6A TO252

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IXTY1R6N50D2 - LITTELFUSE - PCB symbol
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IXTY1R6N50D2 - LITTELFUSE PCB footprint - Other - Other - IXTY1R6N50D2-2
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IXTY1R6N50D2 - LITTELFUSE - 3D model - Other - IXTY1R6N50D2-2
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IXTY1R6N50D2 Details

  • Manufacturer Part Number:

    IXTY1R6N50D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    2.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16.5 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTY1R6N50D2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXTY1R6N50D2 is -40°C to 125°C.
  • To ensure safe operation, ensure proper heat sinking, avoid overheating, and follow the recommended thermal management guidelines in the datasheet.
  • The recommended gate current for the IXTY1R6N50D2 is typically in the range of 10-50 mA, but it's essential to consult the datasheet for specific application requirements.
  • While the IXTY1R6N50D2 is suitable for high-frequency switching, it's crucial to consider the device's switching characteristics, such as turn-on and turn-off times, to ensure reliable operation.
  • To protect the IXTY1R6N50D2 from EOS, use proper circuit protection, such as voltage clamping, current limiting, and surge protection devices, and follow recommended design practices.

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IXTY1R6N50D2 Overview

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