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JAN1N5802US - Microsemi Corporation

Description: Diode Switching 50V 2.5A 2-Pin A-MELF Bag Voidless Hermetically Sealed Ultrafast Recovery Glass Rectifiers

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JAN1N5802US - Microsemi Corporation - PCB symbol
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JAN1N5802US - Microsemi Corporation PCB footprint - Other - Other - JAN1N5802US-1
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JAN1N5802US Details

  • Manufacturer Part Number:

    JAN1N5802US

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Application:

    ULTRA FAST RECOVERY POWER

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • Non-rep Pk Forward Current-Max:

    35 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Output Current-Max:

    2.5 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-19500/477F

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    YES

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

JAN1N5802US Frequently Asked Questions (FAQs)

  • The recommended storage temperature for JAN1N5802US is -65°C to 150°C.
  • Yes, the JAN1N5802US is a radiation-hardened device, designed to withstand the harsh conditions of space and other high-radiation environments.
  • The maximum surge current rating for the JAN1N5802US is 30A for 1ms.
  • Yes, the JAN1N5802US is designed for high-reliability applications, such as aerospace, defense, and industrial control systems, where failure is not an option.
  • Yes, the JAN1N5802US is compatible with lead-free soldering processes, making it suitable for use in RoHS-compliant designs.

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JAN1N5802US Overview

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