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JANSR2N7488T3 - Infineon

Description: Radiation Hardened Power MOSFET Thru-Hole (Low–Ohmic TO-257AA) 130V, 18A, N-channel, R5 Technology

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PCB Footprints
JANSR2N7488T3 - Infineon PCB footprint - Other - Other - TO-257AA_2026
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3D Models
JANSR2N7488T3 - Infineon  - 3D model - Other - TO-257AA_2026
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JANSR2N7488T3 Details

  • Manufacturer Part Number:

    JANSR2N7488T3

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.52

  • Additional Feature:

    RADIATION HARDENED

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    130 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-257AA

  • JESD-30 Code:

    S-XSFM-P3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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JANSR2N7488T3 Overview

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