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KSD880YTU - onsemi

Description: Low Frequency Power Amplifier; Complement to KSB834

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PCB Footprints
KSD880YTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-ren2
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3D Models
KSD880YTU - onsemi  - 3D model - Transistor Outline, Vertical - TO-220-ren2
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KSD880YTU Details

  • Manufacturer Part Number:

    KSD880YTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

KSD880YTU Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the KSD880YTU is 4.5V to 5.5V.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and decouple it with a 0.1uF capacitor to ground. Additionally, connect the VREF pin to a stable 2.5V reference voltage.
  • The maximum allowable power dissipation for the KSD880YTU is 500mW.
  • To handle thermal considerations, ensure good thermal conductivity between the device and the PCB, and consider using a heat sink if the device will be operating at high temperatures or high currents.
  • For optimal performance, keep the analog and digital grounds separate, use a solid ground plane, and minimize trace lengths and widths to reduce noise and electromagnetic interference (EMI).

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KSD880YTU Overview

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Part Image 2SD880-Y Micro Commercial Components

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Part Image KSD880Y Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2SD880-Y-BP Micro Commercial Components

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image KSD2012YYDTU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image BD17716 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for KSD880YTU, check out Findchips.com