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KSP44TA - onsemi

Description: KSP45 Collector-Base Voltage : VCBO= 400 V; High-Voltage Transistor; KSP44 Collector-Base Voltage : VCBO= 500 V

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PCB Footprints
KSP44TA - onsemi PCB footprint - Other - Other - 3-Lead_TO-92_AMMO
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3D Models
KSP44TA - onsemi  - 3D model - Other - 3-Lead_TO-92_AMMO
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KSP44TA Details

  • Manufacturer Part Number:

    KSP44TA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • JESD-609 Code:

    e3

  • Qualification Status:

    Not Qualified

  • Terminal Finish:

    Matte Tin (Sn) - annealed

KSP44TA Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the KSP44TA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the KSP44TA is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • For optimal thermal performance, it is recommended to use a PCB with a large copper area for heat dissipation, and to place the KSP44TA near a heat sink or a thermal pad. The device should be mounted on a PCB with a thermal via or a thermal land to improve heat dissipation. Additionally, a thermal interface material (TIM) can be used to improve the thermal conductivity between the device and the heat sink.
  • To protect the KSP44TA from electrostatic discharge (ESD), it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage. Additionally, the device should be connected to a ground plane or a protective circuit to prevent ESD damage during handling and assembly.
  • The KSP44TA should be stored in a dry, cool place, away from direct sunlight and moisture. The device should be handled with clean, dry gloves, and should not be exposed to temperatures above 150°C or below -40°C. The device should be stored in its original packaging or in a protective container to prevent mechanical damage.

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KSP44TA Overview

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Part Image KSP44BU onsemi

Power Bipolar Transistor

Part Image KSP44TF onsemi

Power Bipolar Transistor

Part Image KSP44TF Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin

Part Image KSP44TA Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin

Part Image KSP44D27Z Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for KSP44TA, check out Findchips.com