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LE25S161PCTXG - onsemi

Description: NOR Flash 16M BIT SERIAL FLASH MEMO

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PCB Footprints
LE25S161PCTXG - onsemi PCB footprint - Other - Other - UDFN8, 4x3, 0.8P CASE 506DC ISSUE O
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3D Models
LE25S161PCTXG - onsemi  - 3D model - Other - UDFN8, 4x3, 0.8P CASE 506DC ISSUE O
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LE25S161PCTXG Details

  • Manufacturer Part Number:

    LE25S161PCTXG

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    UDFN-8

  • Manufacturer Package Code:

    506DC

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2016-02-08

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Clock Frequency-Max (fCLK):

    70 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Length:

    4 mm

  • Memory Density:

    16777216 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    2097152 words

  • Number of Words Code:

    2000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    90 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VSON

  • Package Equivalence Code:

    SOLCC8,.12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    1.8 V

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.000012 A

  • Supply Current-Max:

    0.0075 mA

  • Supply Voltage-Max (Vsup):

    1.95 V

  • Supply Voltage-Min (Vsup):

    1.65 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Type:

    NOR TYPE

  • Width:

    3 mm

  • Write Protection:

    HARDWARE/SOFTWARE

LE25S161PCTXG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for the LE25S161PCTXG involves placing the device close to the power source, using a solid ground plane, and minimizing the length of the power traces. Additionally, it is recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to reduce noise and improve signal integrity.
  • To ensure the reliability of the LE25S161PCTXG in high-temperature applications, it is recommended to follow the guidelines for thermal management provided in the datasheet. This includes ensuring good airflow, using a heat sink if necessary, and avoiding overheating. Additionally, it is recommended to perform thermal simulations and testing to validate the design.
  • The LE25S161PCTXG has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding oneself before handling the device, and avoiding static electricity generation.
  • Yes, the LE25S161PCTXG is AEC-Q100 qualified, which means it is suitable for use in automotive applications. However, it is recommended to consult with onsemi's automotive support team to ensure that the device meets the specific requirements of the application.
  • To troubleshoot issues with the LE25S161PCTXG, it is recommended to follow a systematic approach, starting with checking the power supply and signal integrity. Use oscilloscopes and logic analyzers to debug the signals, and consult the datasheet and application notes for guidance. If the issue persists, contact onsemi's technical support team for further assistance.

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