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LMV358DR2G - onsemi

Description: Operation from 2.7 V to 5.0 V Single-Sided Power Supply; No Output Crossover Distortion; Industrial temperature Range: -40C to +85C; Rail-to-Rail Output; Low Quiescent Current; No Output Phase-Reversal from Overdriven Input

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LMV358DR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8
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LMV358DR2G Details

  • Manufacturer Part Number:

    LMV358DR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.1

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Common-mode Reject Ratio-Min:

    50 dB

  • Common-mode Reject Ratio-Nom:

    65 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    9000 µV

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Low-Bias:

    NO

  • Low-Offset:

    NO

  • Micropower:

    YES

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Power:

    NO

  • Programmable Power:

    NO

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Slew Rate-Nom:

    1 V/us

  • Supply Current-Max:

    0.34 mA

  • Supply Voltage Limit-Max:

    5.5 V

  • Supply Voltage-Nom (Vsup):

    2.7 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    1000

  • Voltage Gain-Min:

    10000

  • Wideband:

    NO

  • Width:

    3.9 mm

LMV358DR2G Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the LMV358DR2G is 670mW, which is calculated based on the package thermal resistance and the maximum junction temperature.
  • To ensure stability, it's recommended to use a compensation capacitor between the output and the inverting input, and to keep the gain resistors as close to the op-amp as possible to minimize parasitic capacitance.
  • For optimal performance, it's recommended to keep the input and output traces as short as possible, and to use a ground plane to minimize noise and electromagnetic interference (EMI).
  • The LMV358DR2G is rated for operation up to 125°C, but the maximum junction temperature should not exceed 150°C. It's recommended to derate the power dissipation accordingly for high-temperature applications.
  • It's recommended to use ESD protection devices, such as TVS diodes or ESD arrays, to protect the LMV358DR2G from electrostatic discharge. Additionally, handling precautions should be taken to prevent ESD damage during assembly and testing.

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