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MBR10100 - onsemi

Description: Guard−Ring for Stress Protection  Low Forward Voltage  175C Operating Junction Temperature  Epoxy Meets UL 94 V−0 @ 0.125 in  Low Power Loss/High Efficiency  High Surge Capacity  Low Stored Charge Majority Carrier Conduction  AEC−Q101 Qualified and PPAP Capable  NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  All Packages are Pb−Free*

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PCB Footprints
MBR10100 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220, 2−LEAD CASE 221B−04 ISSUE F_2025
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3D Models
MBR10100 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220, 2−LEAD CASE 221B−04 ISSUE F_2025
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MBR10100 Details

  • Manufacturer Part Number:

    MBR10100

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AC 2 LEAD

  • Package Description:

    PLASTIC, CASE 221B-04, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    221B-04

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.95 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e0

  • Non-rep Pk Forward Current-Max:

    150 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MBR10100 Frequently Asked Questions (FAQs)

  • The MBR10100 can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • The MBR10100 requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and within the recommended range for optimal performance.
  • The MBR10100 can withstand a maximum reverse voltage of 100V.
  • Handle the MBR10100 with ESD-protective equipment, such as wrist straps and mats, and ensure the device is stored in an ESD-protective package.
  • Yes, the MBR10100 is suitable for high-reliability applications, such as aerospace and defense, due to its high-quality manufacturing process and rigorous testing.

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MBR10100 Overview

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Part Image MBR10100-E3/4W Vishay Semiconductors

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC

Part Image MBR10100G Taiwan Semiconductor

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC,

Part Image SB10100 Won-Top Electronics Co Ltd

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220

Part Image MBR10100 Surge Components Inc

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC

Part Image MBR10100 Diodes Incorporated

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM)

For a full list of alternate parts for MBR10100, check out Findchips.com