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MBR1H100SFT3G - onsemi

Description: Guardring for Stress Protection; Low Forward Voltage; 175°C Operating Junction Temperature; Epoxy Meets UL94 V-0; Package Designed for Optimal Automated Board Assembly; ESD Ratings: Machine Model = C, Human Body Model = 3B; This is a Pb-Free Device Mechanical Characteristics:; Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape; Device Marking: L1H; Polarity Designator: Cathode Band; Weight: 11.7 mg (approximately); Case: Epoxy, Molded; Lead Finish: 100% Matte Sn (Tin); Lead and Mounting Surface T

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MBR1H100SFT3G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SOD-123FL CASE498
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MBR1H100SFT3G - onsemi  - 3D model - Small Outline Diode Flat Lead - SOD-123FL CASE498
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MBR1H100SFT3G Details

  • Manufacturer Part Number:

    MBR1H100SFT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-123FL 2 LEAD

  • Package Description:

    498, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    498-01

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    100 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.61 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MBR1H100SFT3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR1H100SFT3G is -55°C to 150°C.
  • To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a robust PCB design, proper thermal management, and adequate ESD protection.
  • The recommended land pattern for the MBR1H100SFT3G can be found in the onsemi application note AND8199/D, which provides guidelines for PCB layout and land pattern design.
  • Yes, the MBR1H100SFT3G is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is operated within the specified voltage and current ratings, and consider the effects of switching losses and thermal management.
  • The power dissipation of the MBR1H100SFT3G can be calculated using the formula: Pd = (Vf x If) + (Vr x Ir), where Vf is the forward voltage, If is the forward current, Vr is the reverse voltage, and Ir is the reverse current. Refer to the datasheet for the specific values.

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Part Image NRVB1H100SFT3G onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon