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MBR2560CT - onsemi

Description: Low Power Loss, High Efficiency; Metal Silicon Junction, Majority Carrier Conduction; Guard Ring for Over-Voltage Protection (OVP); High Current Capacity, Low Forward Voltage Drop; High Surge Capacity

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MBR2560CT - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-220-ren1
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MBR2560CT - onsemi  - 3D model - Transistor Outline, Vertical - to-220-ren1
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MBR2560CT Details

  • Manufacturer Part Number:

    MBR2560CT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.75 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    25 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    2 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    60 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    60 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

MBR2560CT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR2560CT is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source (e.g., VCC) and the cathode to a current-limiting resistor, then to ground. The recommended bias voltage is 5V to 15V.
  • The maximum current rating for the MBR2560CT is 2.5A.
  • Yes, the MBR2560CT is suitable for switching power supply applications due to its fast switching speed and low voltage drop.
  • To protect the MBR2560CT from EOS, use a transient voltage suppressor (TVS) or a zener diode in parallel with the rectifier to absorb voltage spikes and surges.

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MBR2560CT Overview

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Part Image MBR2560CT-E3/45 Vishay Semiconductors

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Part Image MBR2560CT Fairchild Semiconductor Corporation

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Part Image MBR2560CT Lite-On Semiconductor Corporation

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Part Image MBR2560CT Vishay Intertechnologies

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Part Image MBR2560CT General Instrument Corp

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 60V V(RRM), Silicon, TO-220AB

For a full list of alternate parts for MBR2560CT, check out Findchips.com