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MBR30H100CTG - onsemi

Description: Low Forward Voltage: 0.67 V @ 125C; Low Power Loss/High Efficiency; High Surge Capacity; 175C Operating Junction Temperature; 30 A Total (15 A Per Diode Leg); Guard-Ring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94, V-0 @ 0.125 in; Weight: Approximately 1.9 grams; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds

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MBR30H100CTG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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MBR30H100CTG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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MBR30H100CTG Details

  • Manufacturer Part Number:

    MBR30H100CTG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.67 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    250 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    4.5 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

MBR30H100CTG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR30H100CTG is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source and the cathode to ground. The recommended bias voltage is 10V to 30V, with a maximum current rating of 100mA.
  • Store the MBR30H100CTG in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 30°C.
  • Yes, the MBR30H100CTG is suitable for high-reliability applications due to its robust design and manufacturing process. However, it's essential to follow proper handling, storage, and assembly procedures to ensure reliability.
  • Handle the MBR30H100CTG with ESD-protective equipment, such as wrist straps or mats, and avoid touching the device's pins or leads. Ground yourself before handling the device, and use ESD-protective packaging for storage and shipping.

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MBR30H100CTG Overview

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Part Image MBR30H100CT onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB