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MBR440MFST1G - onsemi

Description: Schottky Power Rectifier, Switch-mode, 4.0 A, 40 V

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MBR440MFST1G Details

  • Manufacturer Part Number:

    MBR440MFST1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Pin Count:

    5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.65 V

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    40 V

  • Reverse Current-Max:

    800 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MBR440MFST1G Frequently Asked Questions (FAQs)

  • A good PCB layout for the MBR440MFST1G should include a thermal pad connected to a large copper area on the bottom layer, with multiple vias to dissipate heat. The copper area should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material. Additionally, verify that the device is operated within the specified maximum junction temperature (Tj) of 150°C.
  • The MBR440MFST1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of ±2 kV and a machine model (MM) of ±200 V are recommended for ESD protection.
  • Yes, the MBR440MFST1G can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the layout and design minimize parasitic inductance and capacitance.
  • The gate resistor value depends on the specific application and requirements. A general guideline is to use a value between 10 Ω and 100 Ω to ensure proper switching and minimize ringing. However, it's recommended to consult the application note or consult with an onsemi representative for specific guidance.

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MBR440MFST1G Overview

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