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MBRAF1100T3G - onsemi

Description: Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; High Blocking Voltage - 100 V; 150°C Operating Junction Temperature; Guard-Ring for Stress Protection; This is a Pb-Free Device Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 95 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000

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MBRAF1100T3G Details

  • Manufacturer Part Number:

    MBRAF1100T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA-FL

  • Pin Count:

    2

  • Manufacturer Package Code:

    403AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6.07

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.75 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MBRAF1100T3G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the device, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • The MBRAF1100T3G has built-in ESD protection, but it's still recommended to follow standard ESD handling precautions during assembly and testing. Additionally, consider adding external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.
  • Yes, the MBRAF1100T3G is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended qualification and testing procedures, and to ensure that the device meets the specific requirements of the application, such as AEC-Q101 or ISO 26262.
  • To calculate the power dissipation and junction temperature, use the equations provided in the datasheet, taking into account the device's voltage, current, and thermal resistance. You can also use online calculators or simulation tools to simplify the process.

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MBRAF1100T3G Overview

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