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MBRB41H100CT-1G - onsemi

Description: Last Shipments - Schottky Barrier Rectifier, H-Series, 100 V, 40 A

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MBRB41H100CT-1G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK
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MBRB41H100CT-1G - onsemi  - 3D model - Transistor Outline, Vertical - I2PAK
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MBRB41H100CT-1G Details

  • Manufacturer Part Number:

    MBRB41H100CT-1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MECHANICAL OUTLINE

  • Package Description:

    I2PAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    418

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.67 V

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    350 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

MBRB41H100CT-1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MBRB41H100CT-1G is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C for every 1W of power dissipation above 25°C. Additionally, ensure good thermal conductivity between the device and the heat sink.
  • The maximum allowed voltage transient for the MBRB41H100CT-1G is 150% of the maximum rated voltage (Vr) for a duration not exceeding 100ms. Exceeding this limit may cause device damage or failure.
  • Yes, the MBRB41H100CT-1G can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are matched in terms of voltage and current ratings, and that the thermal management is adequate to prevent hotspots and thermal runaway.
  • The recommended ESD protection for the MBRB41H100CT-1G is to use a human body model (HBM) ESD protection circuit with a minimum rating of 2kV. Additionally, it is recommended to use a device with built-in ESD protection, such as the MBRB41H100CT-1G, which has an internal ESD protection diode.

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MBRB41H100CT-1G Overview

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Part Image MBRB41H100CT-1H onsemi

Rectifier Diode, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA

Part Image MBRB41H100CT-1 onsemi

Rectifier Diode, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA