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MBRD640CTT4G - onsemi

Description: Extremely Fast Switching; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: B620T, B630T, B640T, B650T, B660T; Platinum Barrier with Avalanche Guardrings Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Extremely Low Forward Drop; Shipped 75 units per plastic tube; Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T

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PCB Footprints
MBRD640CTT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-5
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3D Models
MBRD640CTT4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-5
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MBRD640CTT4G Details

  • Manufacturer Part Number:

    MBRD640CTT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    40 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    40 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    40 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MBRD640CTT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBRD640CTT4G is -55°C to 150°C.
  • The recommended storage temperature range for the MBRD640CTT4G is -55°C to 150°C.
  • The maximum power dissipation for the MBRD640CTT4G is 1.5 W.
  • The thermal resistance junction-to-ambient for the MBRD640CTT4G is 125°C/W.
  • Yes, the MBRD640CTT4G is RoHS compliant.

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Sponsored

MBRD640CTT4G Overview

Use the download button to access the MBRD640CTT4G schematic symbol, PCB footprint, and 3D model.
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Part Image MBRDH640CTG00HE3TR Fagor Electrónica

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 40V V(RRM), Silicon, TO-252AA

Part Image MBRDH640CTG00TR Fagor Electrónica

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 40V V(RRM), Silicon, TO-252AA

Part Image MBRD640CT onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 40V V(RRM), Silicon

Part Image MBRD640CTT4 onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 40V V(RRM), Silicon

Part Image SBR660CTT4G onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon

For a full list of alternate parts for MBRD640CTT4G, check out Findchips.com