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MBRD660CTG - onsemi

Description: Extremely Fast Switching; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: B620T, B630T, B640T, B650T, B660T; Platinum Barrier with Avalanche Guardrings Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Extremely Low Forward Drop; AEC-Q101 Qualified and PPAP Capable; NRVBD and SBR Prefixes for Automotive and Other Applications Requir

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MBRD660CTG Details

  • Manufacturer Part Number:

    MBRD660CTG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    56 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    60 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    60 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    60 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MBRD660CTG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBRD660CTG is -55°C to 150°C.
  • To ensure proper biasing, connect the anode to a voltage source through a current-limiting resistor, and the cathode to ground through a low-impedance path. Consult the datasheet for specific biasing requirements.
  • Store the MBRD660CTG in a dry, cool place, away from direct sunlight and moisture. Avoid exposing the device to temperatures above 30°C or humidity above 60%.
  • Yes, the MBRD660CTG is suitable for switching power supply applications due to its high voltage and current handling capabilities. However, ensure proper snubber circuit design and layout to minimize ringing and voltage spikes.
  • Handle the MBRD660CTG with ESD-protective equipment, such as wrist straps or mats, to prevent electrostatic discharge damage. Ground yourself before handling the device, and avoid touching the pins or leads.

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MBRD660CTG Overview

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Part Image MBRD660CTRLG onsemi

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Part Image NRVBD660CTRLG onsemi

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Part Image MBRD660CTTRL Vishay Intertechnologies

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Part Image NRVBD660CTG-VF01 onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

For a full list of alternate parts for MBRD660CTG, check out Findchips.com