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MCB200N06YHE3-TP - MCC

Description: N-CHANNEL MOSFET VDS 60V, VGS ±20V, IDM 800A, PD 260W

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MCB200N06YHE3-TP - MCC PCB footprint - Other - Other - MCB200N06YHE3-TP-1
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MCB200N06YHE3-TP Details

  • Manufacturer Part Number:

    MCB200N06YHE3-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    SPLIT GATE TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    47 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Pulsed Drain Current-Max (IDM):

    800 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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MCB200N06YHE3-TP Overview

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