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MJ15023 - onsemi

Description: Bipolar (BJT) Transistor PNP 200 V 16 A 4MHz 250 W Through Hole TO-3

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MJ15023 - onsemi PCB footprint - Other - Other - CASE 1–07 TO–204AA (TO–3) ISSUE
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MJ15023 - onsemi  - 3D model - Other - CASE 1–07 TO–204AA (TO–3) ISSUE
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MJ15023 Details

  • Manufacturer Part Number:

    MJ15023

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3

  • Package Description:

    CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    CASE 1-07

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    200 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    250 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn80Pb20)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJ15023 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ15023 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum voltage, current, and power dissipation ratings, as well as its thermal resistance and junction temperature.
  • To ensure the MJ15023 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.65-0.75V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the base current should be limited to prevent saturation and ensure a stable operating point.
  • The recommended heatsink design for the MJ15023 depends on the specific application and operating conditions. However, a general guideline is to use a heatsink with a thermal resistance of less than 1°C/W to ensure that the device's junction temperature remains within the recommended range. The heatsink should also be designed to provide good thermal contact with the device and to minimize thermal resistance.
  • While the MJ15023 can be used as a switch, it is not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). The device is better suited for linear amplifier applications where its high current capability and low thermal resistance are beneficial. If switching is required, a different device with a higher current gain and lower saturation voltage may be more suitable.
  • To protect the MJ15023 from electrostatic discharge (ESD), it is recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that all equipment and tools are properly grounded. Additionally, the device should be stored in an ESD-safe package and handled with ESD-safe materials to prevent damage.

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Part Image MJ15023G onsemi

Power Bipolar Transistor, 16A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin

Part Image MJ15023 TT Electronics Power and Hybrid / Semelab Limited

Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin