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MJ15024G - onsemi

Description: High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc

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MJ15024G - onsemi PCB footprint - Other - Other - TO−204 (TO−3)CASE 1−07 ISSUE Z_2025-1
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MJ15024G - onsemi  - 3D model - Other - TO−204 (TO−3)CASE 1−07 ISSUE Z_2025-1
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MJ15024G Details

  • Manufacturer Part Number:

    MJ15024G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    250 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    250 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJ15024G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ15024G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of the maximum voltage, current, and power dissipation ratings.
  • To ensure the MJ15024G is properly biased for linear operation, the base-emitter voltage (Vbe) should be set between 0.6V to 0.8V, and the collector-emitter voltage (Vce) should be set to at least 1V to 2V above the emitter voltage. Additionally, the base current should be limited to prevent saturation.
  • The recommended heatsink design for the MJ15024G depends on the specific application and power dissipation requirements. However, a general guideline is to use a heatsink with a thermal resistance of less than 1°C/W, and to ensure good thermal contact between the transistor and heatsink using a thermal interface material.
  • While the MJ15024G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the transistor's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum switching frequency should be derated based on the application's specific requirements.
  • To protect the MJ15024G from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in anti-static packaging, and ESD protection devices, such as TVS diodes, can be used in the circuit design to protect the transistor from ESD events.

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