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MJ2955G - onsemi

Description: Bipolar (BJT) Transistor PNP 60 V 15 A 2.5MHz 115 W Through Hole TO-204 (TO-3) , 15 A , 60 V , -65°C ~ 200°C

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PCB Footprints
MJ2955G - onsemi PCB footprint - Other - Other - TO−204 (TO−3)CASE 1−07 ISSUE Z_2025-1.5
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MJ2955G - onsemi  - 3D model - Other - TO−204 (TO−3)CASE 1−07 ISSUE Z_2025-1.5
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MJ2955G Details

  • Manufacturer Part Number:

    MJ2955G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    LEAD FREE, CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    115 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2.5 MHz

MJ2955G Frequently Asked Questions (FAQs)

  • The MJ2955G can operate from -40°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
  • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor (Rb) and a capacitor (Cb) in parallel. The value of Rb should be chosen to provide a base current of around 1-2 mA, and Cb should be around 100-220 nF to filter out noise.
  • To minimize thermal resistance, use a copper pour on the PCB to create a thermal pad under the transistor. Ensure the thermal pad is connected to a heat sink or a metal plate to dissipate heat efficiently. Keep the thermal pad as close to the transistor as possible and use thermal vias to connect it to the heat sink.
  • To protect the MJ2955G from EOS, use a transient voltage suppressor (TVS) diode or a zener diode in parallel with the transistor to clamp voltage spikes. Additionally, use a fuse or a current-limiting resistor in series with the transistor to prevent excessive current.
  • Store the MJ2955G in a dry, cool place away from direct sunlight. Handle the transistor by the body, avoiding touching the leads or die. Use an anti-static wrist strap or mat when handling the transistor to prevent electrostatic discharge (ESD) damage.

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MJ2955G Overview

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Part Image MJ2955SPL Continental Device India Ltd

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For a full list of alternate parts for MJ2955G, check out Findchips.com