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MJD340G - onsemi

Description: Straight Lead Version in Plastic Sleeves (-1 Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Electrically Similar to Popular MJE340 and MJE350; 300 V (Min) VCEO(sus); Lead Formed Version in 16 mm Tape and Reel (T4 Suffix); 0.5 A Rated Collector Current; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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MJD340G - onsemi PCB footprint - Other - Other - MJD340G-3
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MJD340G - onsemi  - 3D model - Other - MJD340G-3
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MJD340G Details

  • Manufacturer Part Number:

    MJD340G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.56 W

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJD340G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD340G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current limits to avoid thermal runaway and ensure reliability.
  • To ensure the MJD340G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to a value that ensures the device operates within its linear region.
  • For optimal performance and reliability, it's crucial to follow good PCB layout practices, such as minimizing trace lengths, using wide traces for power and ground, and ensuring adequate thermal dissipation. A heat sink or thermal pad may be necessary to maintain a safe junction temperature (Tj) below the maximum rating of 150°C.
  • While the MJD340G is primarily designed for linear applications, it can be used in switching applications with careful consideration. Key factors to consider include the device's switching frequency, rise and fall times, and the potential for electromagnetic interference (EMI). Ensure that the device is properly biased and that the switching frequency is within the recommended range.
  • To protect the MJD340G from ESD and electrical overstress, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. In the circuit design, consider adding protective components like TVS diodes or zener diodes to clamp voltage transients and ensure that the device operates within its recommended voltage and current limits.

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MJD340G Overview

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Part Image KSH340TF Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD340T4 Motorola Semiconductor Products

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image KSH340TF onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image NJVMJD340T4G-VF01 onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD340TF onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

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