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MJD44H11G - onsemi

Description: Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

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MJD44H11G Details

  • Manufacturer Part Number:

    MJD44H11G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    85 MHz

MJD44H11G Frequently Asked Questions (FAQs)

  • A good PCB layout for the MJD44H11G involves keeping the input and output traces separate, using a ground plane, and minimizing loop areas. It's also recommended to use a common mode choke and a shielded inductor to reduce EMI.
  • To ensure proper thermal management, make sure to attach a heat sink to the device, use a thermal interface material, and provide adequate airflow. The maximum junction temperature (Tj) should not exceed 150°C.
  • The recommended input capacitor value for the MJD44H11G is 10uF to 22uF, with a voltage rating of at least 50V. A low-ESR capacitor is recommended to minimize voltage ripple.
  • Yes, the MJD44H11G is suitable for high-reliability applications. It's built with a robust design and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.
  • To protect the MJD44H11G from overvoltage and overcurrent, use a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP). You can also add external components such as fuses, TVS diodes, and zener diodes to provide additional protection.

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MJD44H11G Overview

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Part Image MJD44H11TM Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD44H11TM onsemi

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD44H11T5 onsemi

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Part Image KSH44H11TM onsemi

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For a full list of alternate parts for MJD44H11G, check out Findchips.com