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MJD44H11RLG - onsemi

Description: Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

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MJD44H11RLG Details

  • Manufacturer Part Number:

    MJD44H11RLG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    85 MHz

MJD44H11RLG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (TJ = -55°C to 150°C). Use a heat sink or thermal pad to maintain a safe junction temperature. Monitor the device's thermal resistance (RθJA) and ensure it is within the specified range.
  • Handle the device by the body, not the leads. Avoid bending or twisting the leads. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent ESD damage.
  • Ensure that the device is operated within the recommended voltage and current ratings. Use a voltage regulator or a current limiter to prevent voltage spikes or current surges. Implement a fuse or a current-limiting resistor to prevent overcurrent conditions.
  • When paralleling multiple MJD44H11RLG devices, ensure that each device has its own current sense resistor and that the devices are matched for current sharing. Use a common gate drive signal and ensure that the devices are thermally coupled to prevent thermal runaway.

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MJD44H11RLG Overview

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Part Image MJD44H11T4 STMicroelectronics

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Part Image MJD44H11 Motorola Semiconductor Products

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image KSH44H11-TF Samsung Semiconductor

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD44H11TM_NL Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD44H11 STMicroelectronics

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD44H11RLG, check out Findchips.com