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MJE15029G - onsemi

Description: DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

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MJE15029G - onsemi - PCB symbol
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PCB Footprints
MJE15029G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220_1
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3D Models
MJE15029G - onsemi - 3D model - Transistor Outline, Vertical - TO−220_1
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MJE15029G Details

  • Manufacturer Part Number:

    MJE15029G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15029G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15029G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating the device in the saturation region for extended periods.
  • To ensure the MJE15029G is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the recommended operating ranges. A typical biasing scheme involves setting the base voltage (VB) to around 0.7V to 1V, and the collector voltage (VC) to around 10V to 20V, depending on the specific application requirements.
  • The recommended storage temperature range for the MJE15029G is -55°C to 150°C. It's essential to store the device within this temperature range to prevent damage or degradation of the device.
  • While the MJE15029G is primarily designed for linear applications, it can be used in switching applications with some caution. However, it's essential to ensure that the device is properly biased and that the switching frequency is within the device's capabilities. The MJE15029G has a relatively slow switching time (around 10-20 ns), so it may not be suitable for high-frequency switching applications.
  • The recommended soldering temperature profile for the MJE15029G is a maximum peak temperature of 260°C for 10 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. It's essential to follow this profile to prevent damage to the device during the soldering process.

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MJE15029G Overview

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