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MJE15030 - onsemi

Description: Obsolete - Bipolar Transistor, PNP, 150 V, 8.0 A

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PCB Footprints
MJE15030 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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3D Models
MJE15030 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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MJE15030 Details

  • Manufacturer Part Number:

    MJE15030

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15030 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15030 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the MJE15030 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V and 0.8V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation.
  • For optimal thermal management, it is recommended to use a heat sink with a thermal resistance of less than 10°C/W. The PCB layout should also be designed to minimize thermal resistance, with a large copper area for heat dissipation. A minimum of 1 oz copper thickness is recommended.
  • While the MJE15030 is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's safe operating area (SOA) should be carefully considered to prevent overheating.
  • To protect the MJE15030 from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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MJE15030 Overview

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Part Image MJE15030 Central Semiconductor Corp

Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin