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MJE15030G - onsemi

Description: DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

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PCB Footprints
MJE15030G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
MJE15030G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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MJE15030G Details

  • Manufacturer Part Number:

    MJE15030G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15030G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15030G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 20-30% of the maximum rated power to ensure reliable operation.
  • To ensure the MJE15030G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6-0.8V, and the collector-emitter voltage (VCE) is at least 1-2V above the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • For optimal thermal performance, it is recommended to use a PCB layout that provides good thermal conduction and heat dissipation. This can be achieved by using a copper pour or thermal vias under the device, and ensuring good airflow around the component. Additionally, a heat sink or thermal interface material can be used to further improve heat dissipation.
  • To protect the MJE15030G from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage during manufacturing and assembly.
  • The MJE15030G should be stored in a dry, cool place away from direct sunlight and moisture. The device should be handled with anti-static wrist straps or mats to prevent ESD damage. It is also recommended to use anti-static packaging materials and to avoid touching the device's pins or leads during handling.

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