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MJE15033 - onsemi

Description: Obsolete - Bipolar Transistor, NPN, 350 V, 4.0 A

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MJE15033 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MJE15033
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MJE15033 - onsemi  - 3D model - Transistor Outline, Vertical - MJE15033
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MJE15033 Details

  • Manufacturer Part Number:

    MJE15033

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    250 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15033 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15033 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 1.5W at 25°C, and to ensure that the voltage and current ratings are not exceeded.
  • To ensure the MJE15033 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V and 0.8V, and that the collector-emitter voltage (VCE) is at least 1V greater than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended PCB layout for the MJE15033 involves keeping the leads as short as possible, using a solid copper pour for the collector pin, and ensuring good thermal conductivity between the device and the PCB. Thermal management involves providing adequate heat sinking, such as a heat sink or thermal pad, to keep the device junction temperature below 150°C.
  • Yes, the MJE15033 can be used as a switch, but it is not optimized for switching applications. The device has a relatively slow switching time (around 10μs) and a high saturation voltage (around 0.5V), which can lead to increased power losses and reduced efficiency. Additionally, the device may not be able to handle high-frequency switching or high-current pulses.
  • To protect the MJE15033 from electrostatic discharge (ESD), you should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and storing the device in anti-static packaging. Additionally, you can add ESD protection circuits, such as a transient voltage suppressor (TVS) or a zener diode, to the PCB design.

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MJE15033 Overview

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Part Image MJE15033G onsemi

Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin