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MJE15035 - onsemi

Description: Bipolar Transistor, PNP, 350 V, 4.0 A

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MJE15035 Details

  • Manufacturer Part Number:

    MJE15035

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15035 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15035 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 20-30% of the maximum rated power to ensure reliable operation.
  • To ensure the MJE15035 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically 0.6-0.8V) and that the collector-emitter voltage (VCE) is within the recommended range (typically 1-10V). Additionally, you should ensure that the base current is sufficient to maintain the desired collector current.
  • The recommended PCB layout for the MJE15035 involves keeping the leads as short as possible, using a solid copper plane for the collector pin, and ensuring good thermal conductivity between the device and the PCB. Thermal management involves providing adequate heat sinking, such as a heat sink or thermal pad, to keep the device junction temperature below the maximum rated temperature (150°C).
  • Yes, the MJE15035 can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the collector-emitter saturation voltage (VCE(sat)). You should also ensure that the device is properly biased and that the base current is sufficient to maintain the desired collector current during switching.
  • To handle ESD protection for the MJE15035, you should ensure that the device is handled and stored in an ESD-safe environment. You can also add ESD protection devices, such as TVS diodes or ESD protection arrays, to the PCB design to protect the device from electrostatic discharge.

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MJE15035 Overview

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Part Image MJE15035G onsemi

Power Bipolar Transistor, 4A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin