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MJE340STU - onsemi

Description: Obsolete - NPN Bipolar Power Transistor

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MJE340STU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MJE340STU-1
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3D Models
MJE340STU - onsemi  - 3D model - Transistor Outline, Vertical - MJE340STU-1
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MJE340STU Details

  • Manufacturer Part Number:

    MJE340STU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Manufacturer Package Code:

    340AS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

MJE340STU Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE340STU is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, which is 150°C for the MJE340STU.
  • To ensure the MJE340STU is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V to 0.8V, and the collector-emitter voltage (VCE) is at least 1V to 2V above the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended storage temperature range for the MJE340STU is -55°C to 150°C. Storage outside of this range may affect the device's reliability and performance.
  • While the MJE340STU is primarily designed for linear amplifier applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • The MJE340STU is a sensitive device and requires proper ESD protection to prevent damage. It is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and storage procedures to minimize the risk of ESD damage.

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MJE340STU Overview

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MJE340STU Alternates

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Image Part Number Model
Part Image MJE340 General Transistor Corp

Power Bipolar Transistor, 0.5A I(C), 1-Element, NPN

Part Image MJE340 TT Electronics Power and Hybrid / Semelab Limited

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image MJE340 TT Electronics Resistors

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image MJE340 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE340 Advanced Semiconductor Inc

Power Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for MJE340STU, check out Findchips.com