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MJE371 - onsemi

Description: Obsolete - 16 A, 160 V NPN Bipolar Power Transistor

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MJE371 - onsemi PCB footprint - Other - Other - MJE371-3
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MJE371 - onsemi  - 3D model - Other - MJE371-3
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MJE371 Details

  • Manufacturer Part Number:

    MJE371

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    PLASTIC, CASE 77-09, TO-225, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJE371 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE371 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the MJE371, a safe operating area can be estimated as Vce ≤ 40V, Ic ≤ 10A, and Pd ≤ 20W.
  • To ensure the MJE371 is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically 0.6-0.8V) and the collector-emitter voltage (Vce) is within the recommended range (typically 1-10V). Additionally, the base current (Ib) should be limited to prevent saturation, and the collector current (Ic) should be within the recommended range (typically 0.1-10A).
  • For optimal performance and reliability, it is recommended to follow good PCB layout practices, such as keeping the transistor away from heat sources, using a heat sink if necessary, and ensuring good thermal conductivity between the transistor and the PCB. A recommended PCB layout includes a copper pour under the transistor, a thermal relief pattern, and a sufficient clearance around the transistor. Additionally, a heat sink with a thermal resistance of ≤ 10°C/W is recommended for high-power applications.
  • To protect the MJE371 from electrostatic discharge (ESD), it is recommended to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, you can add ESD protection devices, such as TVS diodes or ESD protection arrays, to the circuit to absorb or divert ESD events. It is also recommended to use a PCB layout that minimizes the risk of ESD damage, such as using a guard ring around the transistor.
  • The MJE371 is a reliable device with a typical mean time to failure (MTTF) of >100,000 hours. Common failure modes include thermal runaway, electrical overstress, and electrostatic discharge. To ensure reliability, it is recommended to operate the device within its recommended ratings, use proper thermal management, and follow good PCB layout practices. Additionally, it is recommended to perform regular reliability testing and monitoring to detect any potential issues early on.

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MJE371 Overview

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MJE371 Alternates

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Image Part Number Model
Part Image MJE371 Rochester Electronics LLC

4A, 40V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, TO-225, 3 PIN

Part Image MJE371 TT Electronics Resistors

Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-127, Plastic/Epoxy, 3 Pin

Part Image MJE371G Rochester Electronics LLC

4A, 40V, PNP, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN

Part Image MJE371 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE371 Texas Instruments

PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

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