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MJE5742G - onsemi

Description: These Devices are PbFree and are RoHS Compliant; Complementary to MJE5740

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MJE5742G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK-a
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MJE5742G - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK-a
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MJE5742G Details

  • Manufacturer Part Number:

    MJE5742G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    ROHS COMPLIANT, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJE5742G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE5742G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the collector current to 1A and the collector-emitter voltage to 20V to ensure safe operation.
  • To ensure the MJE5742G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is at least 1V. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink for the MJE5742G depends on the specific application and power dissipation requirements. However, a general rule of thumb is to use a heatsink with a thermal resistance of around 10-20°C/W to ensure the device operates within its safe operating area.
  • Yes, the MJE5742G can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). For switching applications, it's recommended to use a transistor with a higher current gain and lower saturation voltage, such as the 2N2222 or 2N3904.
  • To protect the MJE5742G from electrostatic discharge (ESD), it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Additionally, handling the device with an anti-static wrist strap or mat can also help prevent ESD damage.

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MJE5742G Overview

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Part Image MJE5742 Rochester Electronics LLC

8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-06, 3 PIN

Part Image MJE5742 onsemi

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin