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MJF122G - onsemi

Description: Reduced System Cost; UL Recognized, File #E69369, to 3500 VRMS Isolation; 5 A Rated Collector Current; High DC Current Gain 2000 (Min) @ IC = 3 Adc; Electrically Similar to the Popular TIP122 and TIP127; 100 VCEO(sus); No Isolating Washers Required; Pb-Free Packages are Available

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MJF122G Details

  • Manufacturer Part Number:

    MJF122G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Pin Count:

    3

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    2000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJF122G Frequently Asked Questions (FAQs)

  • The SOA for the MJF122G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of 10A and 40V.
  • To ensure linear operation, the MJF122G should be biased in the active region, where the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is around 1-2V. The base current should be limited to prevent saturation.
  • A good PCB layout for the MJF122G should minimize thermal resistance by using a large copper area for heat dissipation. A thermal pad or heat sink can be used to improve heat dissipation. The device should be placed on a thick copper layer with multiple vias to the ground plane.
  • Yes, the MJF122G can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the transition frequency, rise and fall times, and the maximum collector current. The device's switching performance can be improved by using a snubber circuit or a gate driver.
  • To protect the MJF122G from ESD, it's recommended to use ESD protection devices, such as TVS diodes or ESD suppressors, in the circuit. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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MJF122G Overview

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Part Image MJF122 onsemi

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin