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MJH11017G - onsemi

Description: Monolithic Construction; Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21; Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A; High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types); Pb-Free Packages are Available

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MJH11017G - onsemi - PCB symbol
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MJH11017G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MJH11017G
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MJH11017G - onsemi - 3D model - Transistor Outline, Vertical - MJH11017G
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MJH11017G Details

  • Manufacturer Part Number:

    MJH11017G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340D-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

MJH11017G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, thermal vias can be used to further improve heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • The MJH11017G has internal ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind.
  • Yes, the MJH11017G is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards. Consult with onsemi's application engineers for guidance.
  • Use a combination of visual inspection, voltage and current measurements, and thermal imaging to identify potential issues. Consult the datasheet and application notes for troubleshooting guidelines. If issues persist, contact onsemi's technical support for assistance.

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MJH11017G Overview

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MJH11017G Alternates

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Part Image MJH11017 onsemi

Power Bipolar Transistor, 15A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin