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MJH6284G - onsemi

Description: Extremely High RBSOA Capability; Inverters; 100 C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents; Relay Drivers 120 ns Inductive Crossover Time 100 C (T; Motor Controls 800 ns Inductive Storage Time 100 C (T; Extended FBSOA Rating Using Ultra-fast Rectifiers; Switching Regulators Collector-Emitter Voltage VCEV = 1000 Vdc; Solenoids 80 ns Inductive Fall Time 100 C (Typ); Fast Turn-Off Times; Deflection Circuits; Pb-F

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Symbol
MJH6284G - onsemi - PCB symbol
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PCB Footprints
MJH6284G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
MJH6284G - onsemi - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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MJH6284G Details

  • Manufacturer Part Number:

    MJH6284G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Base Capacitance-Max:

    400 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

  • VCEsat-Max:

    3 V

MJH6284G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Use a heat sink with a thermal resistance of 10°C/W or lower, and ensure good airflow around the device. Also, consider derating the device's power dissipation at high temperatures.
  • The SOA is typically defined by the device's voltage and current ratings. For the MJH6284G, the maximum voltage is 100V, and the maximum current is 10A. Operating within these limits ensures safe and reliable operation.
  • Use a TVS (transient voltage suppressor) or a zener diode to protect against EOS. For ESD protection, use a diode array or a dedicated ESD protection device. Follow proper handling and storage procedures to prevent ESD damage.
  • A gate drive circuit with a high-current, low-impedance driver (e.g., TC4420) and a gate resistor (e.g., 10Ω) is recommended. This ensures fast switching times and minimizes ringing.

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MJH6284G Overview

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MJH6284G Alternates

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Part Image MJH6284 onsemi

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin