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MJH6287G - onsemi

Description: Extremely High RBSOA Capability; Inverters; 100 C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents; Relay Drivers 120 ns Inductive Crossover Time 100 C (T; Motor Controls 800 ns Inductive Storage Time 100 C (T; Extended FBSOA Rating Using Ultra-fast Rectifiers; Switching Regulators Collector-Emitter Voltage VCEV = 1000 Vdc; Solenoids 80 ns Inductive Fall Time 100 C (Typ); Fast Turn-Off Times; Deflection Circuits; Pb-F

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MJH6287G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MJH6287G
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MJH6287G - onsemi  - 3D model - Transistor Outline, Vertical - MJH6287G
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MJH6287G Details

  • Manufacturer Part Number:

    MJH6287G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Base Capacitance-Max:

    600 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

  • VCEsat-Max:

    3 V

MJH6287G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Use a heat sink with a thermal resistance of 10°C/W or lower, and ensure good airflow around the device. Also, derate the power dissipation according to the temperature derating curve in the datasheet.
  • The SOA is limited by the maximum junction temperature (Tj) of 150°C. Ensure that the device operates within the recommended voltage and current limits to prevent overheating.
  • Use a transient voltage suppressor (TVS) or a zener diode to clamp voltage transients. Also, ensure that the device is operated within the recommended voltage and current limits.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Handle the devices by the body, not the leads, and avoid bending or flexing the leads.

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MJH6287G Overview

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